EDN

Inverter design optimized using all-SiC power devices

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
Digi Times

SiC power module advantages highlighted as luxury EVs move toward 800V, 800km

Both third-generation semiconductor silicon carbide (SiC) power components and silicon-based insulated gate bipolar transistors (Si-based IGBT) are being used in electric vehicles (EV), but the market ...
EDN

SiC power devices improve efficiency, performance, and cost

With the latest introductions of next-generation silicon carbide (SiC) MOSFETs and diodes, SiC power devices are ready to impact mainstream power applications in solar inverters, motor drives, UPS ...
Electronic Design

2,300-V SiC Power Module Raises the Bar for Renewable Energy

Wolfspeed is bringing the power-handling properties of silicon carbide (SiC) to the renewable energy, energy storage, and high-capacity EV fast-charging sectors with its new family of 2,300-V power ...
Electronic Design

SiC Transistor Basics: FAQs

Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
Business Wire

Mitsubishi Electric to Ship Samples of SBD-embedded SiC-MOSFET Module

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...