Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...

The stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by 1-fold, SiC power modules allow for ...

Rohm Semiconductor has announced the use of power modules equipped with the company's fourth-generation SiC MOSFET bare chips for traction inverters in three ZEEKR EV models manufactured by Zhejiang ...

Santa Clara, CA and Kyoto, Japan, Aug. 29, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of power modules equipped with 4 th generation SiC MOSFET bare chips for the ...

Japan's Ministry of Economy, Trade, and Industry (METI) has announced a subsidy program totaling up to JPY70.5 billion (US$470.34 million) for the SiC power semiconductor production collaboration ...

Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...

In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: ...

PHOENIX--(BUSINESS WIRE)--ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has introduced a full SiC power module for solar inverter applications, which has been selected by the ...