TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new NX-type full-SiC (silicon carbide) power semiconductor module for ...

TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today that it has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module that is believed to offer the ...

The BSM300D12P2E001 is a full SiC power module intended for inverters and converters in solar power conditioners and industrial equipment. The device has a current rating of 300 A making it suitable ...

The high 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment, while 77% lower switching loss vs.

For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...

Navitas Semiconductor NVTS offers a robust and expanding line of silicon carbide (SiC) products through its GeneSiC brand, enabling high-voltage, high-efficiency, and high-reliability performance ...

Japan-based Mitsubishi Electric has started testing of railcar traction converter/inverter systems with all-silicon carbide (SiC) power modules installed on a N700 Shinkansen bullet train for Central ...

For the electrification of cars to assist in achieving a decarbonized society, the development of more efficient, compact, and lightweight electric powertrain systems must continue to progress. And ...

As more power electronic devices find their way into electrical racing vehicles, semiconductor companies and automakers partner up to develop better wideband-gap devices. Semiconductor companies are ...

The electrification of vehicles is fueling demand for silicon carbide power ICs, but it also is creating challenges in finding and identifying defects in those chips. Coinciding with this is a growing ...